secure mobile solutions silicon discretes data sheet, bga612, nov. 2003 never stop thinking. bga612 silicon germanium broadband mmic amplifier mmic
edition 2003-11-04 published by infineon technologies ag, st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 2003. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted char- acteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infin- eon technologies office in germany or our infineon techno logies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your n earest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
for questions on technology, delivery and prices please contact the infineon technologies offices in germany or the infineon technologies companies and representatives worldwide: see our webpage at http://www.infineon.com bga612 data sheet revision history: 2003-11-04 previous version: 2002-05-27 page subjects (major changes since last revision) preliminary status removed
data sheet 4 2003-11-04 esd: electrostatic discharge sensitive device, observe handling precaution! type package marking chip bga612 sot343 bns t0545 silicon germanium broadband mmic amplifier bga612 vps05605 4 2 1 3 gnd, 2,4 in, 1 out, 3 features ? cascadable 50 ? -gain block 3 db-bandwidth: dc to 2.8 ghz with 17.0 db typical gain at 1.0 ghz compression point p -1db = 7 dbm at 2.0 ghz noise figure f 50 ? = 2.35 db at 2.0 ghz absolute stable 70 ghz f t - silicon germanium technology applications driver amplifier for gsm/pcs/cdma/umts broadband amplifier for sat-tv & lnbs broadband amplifier for catv description the bga612 is a broadband matched, general purpose mmic amplifier in a darlington configuration. it is optimized for a typical supply current of 20ma. the bga612 is based on infineon technologies? b7hf silicon germanium technology.
bga612 data sheet 5 2003-11-04 maximum ratings notes: all voltages refer to gnd-node 1) valid for z s =z l =5 0? , v cc =5v, r bias =135 ? 2) t s is measured on the ground lead at the soldering point parameter symbol value unit device voltage v d 2.8 v device current i d 80 ma current into pin in i in 0.7 ma input power 1) p in 10 dbm total power dissipation, t s < 105c 2) p tot 225 mw junction temperature t j 150 c ambient temperature range t a -65 ... +150 c storage temperature range t stg -65 ... +150 c thermal resistance: junction-soldering point r th js 200 k/w electrical characteristics at t a =25c (measured in test circuit specified in fig. 1) v cc =5v, r bias =135 ? , frequency=2ghz, unless otherwise specified parameter symbol min. typ. max. unit insertion power gain f = 0.1ghz f = 1.0ghz f = 2.0ghz |s 21 | 2 - - - 17.5 17.0 15.8 - - - db noise figure (z s =50 ?) f = 0.1ghz f = 1.0ghz f = 2.0ghz f 50 ? - - - 1.95 2.25 2.35 - - - db output power at 1db gain compression p -1db -7-dbm output third order intercept point oip 3 -17-dbm input return loss rl in -18-db output return loss rl out -21-db total device current i d -20-ma
bga612 data sheet data sheet 6 2003-11-04 reference plane top view in out in out gnd gnd bias-t bias-t reference plane r bias = 135 ? v d i d v cc = 5v caution: device voltage v d at pin out! v d = v cc - r bias i d s-parameter v cc =5v, r bias =135 ? (see electrical characteristics for conditions) fig.1: test circuit for electrical characteristics and s-parameters frequency s11 s11 s21 s21 s12 s12 s22 s22 [ghz] mag ang mag ang mag ang mag ang 0.1 0.1803 5.5 7.6542 177.5 0.0960 0.0 0.1497 -1.2 0.2 0.1146 7.3 7.7188 173.3 0.0964 1.2 0.1499 -4.6 0.4 0.1345 7.4 7.6068 166.6 0.0956 1.8 0.1503 -11.3 0.6 0.1307 4.4 7.5301 159.7 0.0965 2.8 0.1457 -18.2 0.8 0.1310 5.5 7.3697 153.2 0.0961 4.0 0.1384 -25.5 1.0 0.1341 3.3 7.1755 146.6 0.0969 5.1 0.1292 -33.0 1.2 0.1337 3.8 6.9799 140.8 0.0978 6.4 0.1198 -40.2 1.4 0.1311 3.8 6.7873 134.4 0.0986 6.7 0.1111 -48.5 1.6 0.1302 3.8 6.5728 129.2 0.1002 8.1 0.1033 -57.4 1.8 0.1257 -1.7 6.3555 123.6 0.1018 8.8 0.0958 -67.5 2.0 0.1258 -3.5 6.1539 118.4 0.1044 9.6 0.0891 -78.0 3.0 0.0878 -9.4 5.2390 94.7 0.1172 12.1 0.0823 -146.8 4.0 0.0409 5.2 4.4689 74.0 0.1346 11.6 0.1550 170.5 5.0 0.0517 119.1 3.8775 54.8 0.1544 8.7 0.2362 148.3 6.0 0.1209 131.0 3.3943 36.2 0.1737 3.3 0.2929 129.2 7.0 0.1796 114.7 2.9678 20.2 0.1929 -2.4 0.3527 115.2 8.0 0.2594 104.3 2.6995 2.8 0.2132 -10.7 0.4330 104.6
bga612 data sheet data sheet 7 2003-11-04 power gain |s 21 | 2 , g ma = f(f) v cc = 5v, r bias = 135 ? , i c = 20ma 10 ?1 10 0 10 1 0 2 4 6 8 10 12 14 16 18 20 frequency [ghz] |s 21 | 2 , g ma [db] |s 21 | 2 g ma matching |s 11 |, |s 22 | = f(f) v cc = 5v, r bias = 135 ? , i c = 20ma 10 ?1 10 0 10 1 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 output compression point p ?1db = f(i d ), f = 2ghz 0 20 40 60 80 0 2 4 6 8 10 12 14 16 18 20 i d [ma] p ?1db [dbm] power gain |s 21 | = f(i d ) f = parameter in ghz 0 20 40 60 80 0 2 4 6 8 10 12 14 16 18 20 i d [ma] |s 21 | 2 [db] 1 2 3 4 6 8
bga612 data sheet data sheet 8 2003-11-04 gps05605 1.25 0.1 0.1 max 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 0.1 1.3 2 0.2 b 0.1 0.9 12 3 4 a +0.1 0.6 acc. to +0.2 din 6784 a m 0.20 0.20 m b device current i d = f(v cc ) r bias = parameter in ? 0 1 2 3 4 5 6 0 10 20 30 40 50 60 70 80 v cc [v] i d [ma] 01627 47 68 100 150 device current i d = f(t a ) v cc = 5v, r bias = parameter in ? ?40 ?20 0 20 40 60 80 15 16 17 18 19 20 21 22 23 24 25 t a [c] i d [ma] 120 135 150 noise figure f = f(f) v cc = 5v, r bias = 135 ? , z s = 50 ? t a = parameter in c 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 frequency [ghz] f [db] ?20c +25c +80c package outline
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